標題: High-Performance Schottky Contact Quantum-Well Germanium Channel pMOSFET With Low Thermal Budget Process
作者: Hsu, Chung-Chun
Tsai, Yi-He
Chen, Che-Wei
Li, Jyun-Han
Lin, Yu-Hsien
Lee, Yao-Jen
Luo, Guang-Li
Chien, Chao-Hsin
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: Microwave-activated annealing (MWA);NiSiGe;PMOSFET;quantum well (QW);Schottky barrier height
公開日期: 1-一月-2016
摘要: We present a high-performance Si/Ge/Si p-channel metal-oxide-semiconductor field-effect transistor (pMOSFET) with a NiSiGe Schottky junction source/drain (S/D) formed through microwave-activated annealing. A Schottky contact S/D is preferable, because the lower process temperature is beneficial for eliminating Ge diffusion. The fabricated NiSiGe Schottky junction exhibited a high effective barrier height (Phi(Bn)) of 0.69 eV for electrons, resulting in a high junction current ratio of more than 10(5) at the applied voltage of vertical bar V-a vertical bar = 1 V. Our quantum-well pMOSFET exhibited a high I-ON/I-OFF ratio of similar to 10(7) (I-S) and a moderate subthreshold swing of 166 mV/decade.
URI: http://dx.doi.org/10.1109/LED.2015.2501841
http://hdl.handle.net/11536/129508
ISSN: 0741-3106
DOI: 10.1109/LED.2015.2501841
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 37
結束頁: 11
顯示於類別:期刊論文