標題: | High-Performance Schottky Contact Quantum-Well Germanium Channel pMOSFET With Low Thermal Budget Process |
作者: | Hsu, Chung-Chun Tsai, Yi-He Chen, Che-Wei Li, Jyun-Han Lin, Yu-Hsien Lee, Yao-Jen Luo, Guang-Li Chien, Chao-Hsin 材料科學與工程學系 電子工程學系及電子研究所 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Microwave-activated annealing (MWA);NiSiGe;PMOSFET;quantum well (QW);Schottky barrier height |
公開日期: | 1-一月-2016 |
摘要: | We present a high-performance Si/Ge/Si p-channel metal-oxide-semiconductor field-effect transistor (pMOSFET) with a NiSiGe Schottky junction source/drain (S/D) formed through microwave-activated annealing. A Schottky contact S/D is preferable, because the lower process temperature is beneficial for eliminating Ge diffusion. The fabricated NiSiGe Schottky junction exhibited a high effective barrier height (Phi(Bn)) of 0.69 eV for electrons, resulting in a high junction current ratio of more than 10(5) at the applied voltage of vertical bar V-a vertical bar = 1 V. Our quantum-well pMOSFET exhibited a high I-ON/I-OFF ratio of similar to 10(7) (I-S) and a moderate subthreshold swing of 166 mV/decade. |
URI: | http://dx.doi.org/10.1109/LED.2015.2501841 http://hdl.handle.net/11536/129508 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2015.2501841 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 37 |
結束頁: | 11 |
顯示於類別: | 期刊論文 |