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dc.contributor.authorHsu, Chung-Chunen_US
dc.contributor.authorTsai, Yi-Heen_US
dc.contributor.authorChen, Che-Weien_US
dc.contributor.authorLi, Jyun-Hanen_US
dc.contributor.authorLin, Yu-Hsienen_US
dc.contributor.authorLee, Yao-Jenen_US
dc.contributor.authorLuo, Guang-Lien_US
dc.contributor.authorChien, Chao-Hsinen_US
dc.date.accessioned2016-03-28T00:04:17Z-
dc.date.available2016-03-28T00:04:17Z-
dc.date.issued2016-01-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2015.2501841en_US
dc.identifier.urihttp://hdl.handle.net/11536/129508-
dc.description.abstractWe present a high-performance Si/Ge/Si p-channel metal-oxide-semiconductor field-effect transistor (pMOSFET) with a NiSiGe Schottky junction source/drain (S/D) formed through microwave-activated annealing. A Schottky contact S/D is preferable, because the lower process temperature is beneficial for eliminating Ge diffusion. The fabricated NiSiGe Schottky junction exhibited a high effective barrier height (Phi(Bn)) of 0.69 eV for electrons, resulting in a high junction current ratio of more than 10(5) at the applied voltage of vertical bar V-a vertical bar = 1 V. Our quantum-well pMOSFET exhibited a high I-ON/I-OFF ratio of similar to 10(7) (I-S) and a moderate subthreshold swing of 166 mV/decade.en_US
dc.language.isoen_USen_US
dc.subjectMicrowave-activated annealing (MWA)en_US
dc.subjectNiSiGeen_US
dc.subjectPMOSFETen_US
dc.subjectquantum well (QW)en_US
dc.subjectSchottky barrier heighten_US
dc.titleHigh-Performance Schottky Contact Quantum-Well Germanium Channel pMOSFET With Low Thermal Budget Processen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2015.2501841en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume37en_US
dc.citation.epage11en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000367270700002en_US
dc.citation.woscount0en_US
Appears in Collections:Articles