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dc.contributor.authorAmanatidis, Iliasen_US
dc.contributor.authorKao, Jing-Yaoen_US
dc.contributor.authorDu, Li-Yangen_US
dc.contributor.authorPao, Chun-Weien_US
dc.contributor.authorChen, Yu-Changen_US
dc.date.accessioned2016-03-28T00:04:18Z-
dc.date.available2016-03-28T00:04:18Z-
dc.date.issued2015-12-31en_US
dc.identifier.issn1932-7447en_US
dc.identifier.urihttp://dx.doi.org/10.1021/acs.jpcc.5b09221en_US
dc.identifier.urihttp://hdl.handle.net/11536/129521-
dc.description.abstractTo understand the behavior of thermoelectric efficiency of single-molecule junctions from 0 K to room temperature, we investigated the thermoelectric properties of a dibenzenedithiol (DBDT) single-molecule junction. We investigated its Seebeck coefficient (S), electric conductance (sigma), and electron\'s thermal conductance (kappa(el)) in the framework of Ai/parameter-free density functional theory combined with the Lippmann Schwinger formalism in scattering approach. We observe that the nanojunction is p-type and the value of the Seebeck coefficient at room temperature is around 40 mu V/A, in agreement with the results of the experiment. In addition, we investigate the phonon\'s thermal conductance (kappa(ph)) using (i) the weak-link model suitable for ballistic phonon transport mechanism in the low-temperature quantum regime and (ii) the nonequilibrium molecular dynamics (NEMD) simulation in the high-temperature classical regime. We finally construct the phase diagram for ZT, where the value of ZT reveals the power law behavior that falls into four phases because of the competition between kappa(el) and kappa(ph) and the crossover from the quantum to classical phonon transport mechanism for kappa(ph). Our theory shows the following ZT proportional to T-alpha where x = 2, 0, 2.26, and 3 in different temperature regimes labeled by I, II, III, and IV, respectively.en_US
dc.language.isoen_USen_US
dc.titleThermoelectric Efficiency of Single-Molecule Junctions: Phase Diagram Constructed from First-Principles Calculationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/acs.jpcc.5b09221en_US
dc.identifier.journalJOURNAL OF PHYSICAL CHEMISTRY Cen_US
dc.citation.volume119en_US
dc.citation.issue52en_US
dc.citation.spage28728en_US
dc.citation.epage28736en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000367704500005en_US
dc.citation.woscount0en_US
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