完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Hsieh, E. R. | en_US |
dc.contributor.author | Chung, Steve S. | en_US |
dc.date.accessioned | 2016-03-28T00:04:19Z | - |
dc.date.available | 2016-03-28T00:04:19Z | - |
dc.date.issued | 2015-12-14 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.4938142 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/129535 | - |
dc.description.abstract | The evolution of gate-current leakage path has been observed and depicted by RTN signals on metal-oxide-silicon field effect transistor with high-k gate dielectric. An experimental method based on gate-current random telegraph noise (I-g-RTN) technique was developed to observe the formation of gate-leakage path for the device under certain electrical stress, such as Bias Temperature Instability. The results show that the evolution of gate-current path consists of three stages. In the beginning, only direct-tunnelling gate current and discrete traps inducing I-g-RTN are observed; in the middle stage, interaction between traps and the percolation paths presents a multi-level gate-current variation, and finally two different patterns of the hard or soft breakdown path can be identified. These observations provide us a better understanding of the gate-leakage and its impact on the device reliability. (C) 2015 AIP Publishing LLC. | en_US |
dc.language.iso | en_US | en_US |
dc.title | The understanding on the evolution of stress-induced gate leakage in high-k dielectric metal-oxide-field-effect transistor by random-telegraph-noise measurement | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.4938142 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 107 | en_US |
dc.citation.issue | 24 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000367318600057 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 期刊論文 |