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dc.contributor.authorTsai, Yu-Linen_US
dc.contributor.authorWang, Sheng-Wenen_US
dc.contributor.authorHuang, Jhih-Kaien_US
dc.contributor.authorHsu, Lung-Hsingen_US
dc.contributor.authorChiu, Ching-Hsuehen_US
dc.contributor.authorLee, Po-Tsungen_US
dc.contributor.authorYu, Peichenen_US
dc.contributor.authorLin, Chien-Chungen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.date.accessioned2019-04-03T06:45:06Z-
dc.date.available2019-04-03T06:45:06Z-
dc.date.issued2015-11-30en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OE.23.0A1434en_US
dc.identifier.urihttp://hdl.handle.net/11536/129572-
dc.description.abstractThis work demonstrates the enhanced power conversion efficiency (PCE) in InGaN/GaN multiple quantum well (MQWs) solar cells with gradually decreasing indium composition in quantum wells (GQWs) toward p-GaN as absorber. The GQW can improve the fill factor from 42% to 62% and enhance the short current density from 0.8 mA/cm(2) to 0.92 mA/cm(2), as compares to the typical MQW solar cells. As a result, the PCE is boosted from 0.63% to 1.11% under AM1.5G illumination. Based on simulation and experimental results, the enhanced PCE can be attributed to the improved carrier collection in GQW caused by the reduction of potential barriers and piezoelectric polarization induced fields near the p-GaN layer. The presented concept paves a way toward highly efficient InGaN-based solar cells and other GaN-related MQW devices. (C) 2015 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleEnhanced power conversion efficiency in InGaN-based solar cells via graded composition multiple quantum wellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OE.23.0A1434en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.citation.volume23en_US
dc.citation.issue24en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department光電系統研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000366614100008en_US
dc.citation.woscount7en_US
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