Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chiang, Chang-Lin | en_US |
dc.contributor.author | Zeng, Hui-Kai | en_US |
dc.contributor.author | Li, Chia-Hung | en_US |
dc.contributor.author | Li, Jung-Yu | en_US |
dc.contributor.author | Chen, Shih-Pu | en_US |
dc.contributor.author | Lin, Yi-Ping | en_US |
dc.contributor.author | Hsieh, Tai-Chiung | en_US |
dc.contributor.author | Juang, Jenh-Yih | en_US |
dc.date.accessioned | 2019-04-03T06:44:31Z | - |
dc.date.available | 2019-04-03T06:44:31Z | - |
dc.date.issued | 2016-01-01 | en_US |
dc.identifier.issn | 2158-3226 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.4941317 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/129678 | - |
dc.description.abstract | The present study concerns with the secondary electron emission coefficient,., of the cathode materials used in the newly developed flat electron emission lamp (FEEL) devices, which essentially integrates the concept of using cathode for fluorescent lamp and anode for cathode ray tube (CRT) to obtain uniform planar lighting. Three different cathode materials, namely fluorine-doped tin oxide (FTO), aluminum oxide coated FTO (Al2O3/FTO) and magnesium oxide coated FTO (MgO/FTO) were prepared to investigate how the variations of. and working gases influence the performance of FEEL devices, especially in lowering the breakdown voltage and pressure of the working gases. The results indicate that the MgO/FTO bilayer cathode exhibited a relatively larger effective secondary electron emission coefficient, resulting in significant reduction of breakdown voltage to about 3kV and allowing the device to be operated at the lower pressure to generate the higher lighting efficiency. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). | en_US |
dc.language.iso | en_US | en_US |
dc.title | Secondary electron emission characteristics of oxide electrodes in flat electron emission lamp | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.4941317 | en_US |
dc.identifier.journal | AIP ADVANCES | en_US |
dc.citation.volume | 6 | en_US |
dc.citation.issue | 1 | en_US |
dc.citation.spage | 0 | en_US |
dc.citation.epage | 0 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000369442200075 | en_US |
dc.citation.woscount | 2 | en_US |
Appears in Collections: | Articles |
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