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dc.contributor.authorChiang, Chang-Linen_US
dc.contributor.authorZeng, Hui-Kaien_US
dc.contributor.authorLi, Chia-Hungen_US
dc.contributor.authorLi, Jung-Yuen_US
dc.contributor.authorChen, Shih-Puen_US
dc.contributor.authorLin, Yi-Pingen_US
dc.contributor.authorHsieh, Tai-Chiungen_US
dc.contributor.authorJuang, Jenh-Yihen_US
dc.date.accessioned2019-04-03T06:44:31Z-
dc.date.available2019-04-03T06:44:31Z-
dc.date.issued2016-01-01en_US
dc.identifier.issn2158-3226en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4941317en_US
dc.identifier.urihttp://hdl.handle.net/11536/129678-
dc.description.abstractThe present study concerns with the secondary electron emission coefficient,., of the cathode materials used in the newly developed flat electron emission lamp (FEEL) devices, which essentially integrates the concept of using cathode for fluorescent lamp and anode for cathode ray tube (CRT) to obtain uniform planar lighting. Three different cathode materials, namely fluorine-doped tin oxide (FTO), aluminum oxide coated FTO (Al2O3/FTO) and magnesium oxide coated FTO (MgO/FTO) were prepared to investigate how the variations of. and working gases influence the performance of FEEL devices, especially in lowering the breakdown voltage and pressure of the working gases. The results indicate that the MgO/FTO bilayer cathode exhibited a relatively larger effective secondary electron emission coefficient, resulting in significant reduction of breakdown voltage to about 3kV and allowing the device to be operated at the lower pressure to generate the higher lighting efficiency. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).en_US
dc.language.isoen_USen_US
dc.titleSecondary electron emission characteristics of oxide electrodes in flat electron emission lampen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4941317en_US
dc.identifier.journalAIP ADVANCESen_US
dc.citation.volume6en_US
dc.citation.issue1en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000369442200075en_US
dc.citation.woscount2en_US
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