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dc.contributor.authorLin, Jie-Anen_US
dc.contributor.authorLin, Chung-Kuangen_US
dc.contributor.authorLiu, Chen-Minen_US
dc.contributor.authorHuang, Yi-Saen_US
dc.contributor.authorChen, Chihen_US
dc.contributor.authorChu, David T.en_US
dc.contributor.authorTu, King-Ningen_US
dc.date.accessioned2019-04-03T06:44:31Z-
dc.date.available2019-04-03T06:44:31Z-
dc.date.issued2016-01-01en_US
dc.identifier.issn2073-4352en_US
dc.identifier.urihttp://dx.doi.org/10.3390/cryst6010012en_US
dc.identifier.urihttp://hdl.handle.net/11536/129679-
dc.description.abstractElectromigration tests of SnAg solder bump samples with 15 m bump height and Cu under-bump-metallization (UBM) were performed. The test conditions were 1.45 x 10(4) A/cm(2) at 185 degrees C and 1.20 x 10(4) A/cm(2) at 0 degrees C. A porous Cu3Sn intermetallic compound (IMC) structure was observed to form within the bumps after several hundred hours of current stressing. In direct comparison, annealing alone at 185 degrees C will take more than 1000 h for porous Cu3Sn to form, and it will not form at 170 degrees C even after 2000 h. Here we propose a mechanism to explain the formation of this porous structure assisted by electromigration. The results show that the SnAg bump with low bump height will become porous-type Cu3Sn when stressing with high current density and high temperature. Polarity effects on porous Cu3Sn formation is discussed.en_US
dc.language.isoen_USen_US
dc.subjectintermetallic compoundsen_US
dc.subjectporous Cu3Snen_US
dc.subjectelectromigrationen_US
dc.subjectside wall reactionen_US
dc.titleFormation Mechanism of Porous Cu3Sn Intermetallic Compounds by High Current Stressing at High Temperatures in Low-Bump-Height Solder Jointsen_US
dc.typeArticleen_US
dc.identifier.doi10.3390/cryst6010012en_US
dc.identifier.journalCRYSTALSen_US
dc.citation.volume6en_US
dc.citation.issue1en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000369511700002en_US
dc.citation.woscount9en_US
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