標題: Effective surface treatment for GaN metal-insulator-semiconductor high-electron-mobility transistors using HF plus N-2 plasma prior to SiN passivation
作者: Liu, Shih-Chien
Trinh, Hai-Dang
Dai, Gu-Ming
Huang, Chung-Kai
Dee, Chang-Fu
Majlis, Burhanuddin Yeop
Biswas, Dhrubes
Chang, Edward Yi
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-一月-2016
摘要: An effective surface cleaning technique is demonstrated for the GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) passivation process. In this study, dilute HF solution and in situ N-2 plasma treatments were adopted to remove the native oxide and recover the nitrogen-vacancy defects at the GaN surface before device passivation. To investigate the correlation between the properties of the SiN/GaN interface and the device performance, the GaN MIS-HEMTs were characterized using current-voltage (I-V) measurement, capacitance-voltage (C-V) measurement, and X-ray photoelectron spectroscopy (XPS) analysis. With the application of this surface treatment technique, the device exhibits improved I-V characteristics with low leakage current, low dynamic ON-resistance, and good C-V response with a steep slope. Overall, the results reveal that the oxide-related bonds and nitrogen-vacancy defects at the SiN/GaN interface are the root cause of the GaN MIS-HEMTs performance degradation. (C) 2016 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/JJAP.55.01AD06
http://hdl.handle.net/11536/129691
ISSN: 0021-4922
DOI: 10.7567/JJAP.55.01AD06
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 55
顯示於類別:期刊論文