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dc.contributor.authorHuang, C-Yen_US
dc.contributor.authorZhou, J.en_US
dc.contributor.authorTra, V. T.en_US
dc.contributor.authorWhite, R.en_US
dc.contributor.authorTrappen, R.en_US
dc.contributor.authorN\'Diaye, A. T.en_US
dc.contributor.authorSpencer, M.en_US
dc.contributor.authorFrye, C.en_US
dc.contributor.authorCabrera, G. B.en_US
dc.contributor.authorNguyen, V.en_US
dc.contributor.authorLeBeau, J. M.en_US
dc.contributor.authorChu, Y-Hen_US
dc.contributor.authorHolcomb, M. B.en_US
dc.date.accessioned2016-03-28T00:04:27Z-
dc.date.available2016-03-28T00:04:27Z-
dc.date.issued2015-12-23en_US
dc.identifier.issn0953-8984en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0953-8984/27/50/504003en_US
dc.identifier.urihttp://hdl.handle.net/11536/129710-
dc.description.abstractStrong magnetoelectric coupling can occur at the interface between ferromagnetic and ferroelectric films. Similar to work on interfacial exchange bias, photoemission electron microscopy was utilized to image both magnetic and ferroelectric domains and the resulting interfacial Ti spin in the same locations of La0.7Sr0.3MnO3/PbZr0.2Ti0.8O3 heterostructures. Multiple image analysis techniques, which could be applicable for a variety of fields needing quantitative data on image switching, confirm both improved magnetic switching and an increased population of interfacial spins with increased thickness of the ultrathin La0.7Sr0.3MnO3 layer. The perpendicular orientation of the interfacial spins is also discussed. This work suggests a magnetoelectric dead layer, with reduced interfacial magnetoelectricity when thin magnetic films are present.en_US
dc.language.isoen_USen_US
dc.subjectmagnetoelectricen_US
dc.subjectmanganiteen_US
dc.subjectinterfaceen_US
dc.subjectphotoemission electron microscopyen_US
dc.subjectdichroismen_US
dc.subjectLSMOen_US
dc.subjectimage analysisen_US
dc.titleImaging magnetic and ferroelectric domains and interfacial spins in magnetoelectric La0.7Sr0.3MnO3/PbZr0.2Ti0.8O3 heterostructuresen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0953-8984/27/50/504003en_US
dc.identifier.journalJOURNAL OF PHYSICS-CONDENSED MATTERen_US
dc.citation.volume27en_US
dc.citation.issue50en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000367997100004en_US
dc.citation.woscount0en_US
Appears in Collections:Articles