SIMULATION OF ELECTRIC FIELD DISTRIBUTION IN CMOS SINGLE PHOTON AVALANCHE DIODES AT BREAKDOWN VOLTAGE

Abstract

We simulate the electric field distribution in single-photon avalanche diodes (SPADs) fabricated by CMOS 0.25-mu m high-voltage technology to explain the observed non-uniform 2-D photo-count mapping. The cause of non-uniform electric field distribution at the breakdown voltage is discussed with the aid of simulation. A method for improving the electric field uniformity is also proposed accordingly.