SIMULATION OF ELECTRIC FIELD DISTRIBUTION IN CMOS SINGLE PHOTON AVALANCHE DIODES AT BREAKDOWN VOLTAGE

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Wu, Jau-Yang	en_US
dc.contributor.author	Lin, Sheng-Di	en_US
dc.date.accessioned	2016-03-28T00:05:44Z	-
dc.date.available	2016-03-28T00:05:44Z	-
dc.date.issued	2014-01-01	en_US
dc.identifier.issn	2160-5033	en_US
dc.identifier.uri	http://hdl.handle.net/11536/129802	-
dc.description.abstract	We simulate the electric field distribution in single-photon avalanche diodes (SPADs) fabricated by CMOS 0.25-mu m high-voltage technology to explain the observed non-uniform 2-D photo-count mapping. The cause of non-uniform electric field distribution at the breakdown voltage is discussed with the aid of simulation. A method for improving the electric field uniformity is also proposed accordingly.	en_US
dc.language.iso	en_US	en_US
dc.title	SIMULATION OF ELECTRIC FIELD DISTRIBUTION IN CMOS SINGLE PHOTON AVALANCHE DIODES AT BREAKDOWN VOLTAGE	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2014 INTERNATIONAL CONFERENCE ON OPTICAL MEMS AND NANOPHOTONICS (OMN)	en_US
dc.citation.spage	187	en_US
dc.citation.epage	188	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000366524800094	en_US
dc.citation.woscount	1	en_US
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