Oxide-trap-enhanced Coulomb energy in a metal-oxide-semiconductor system

Abstract

Coulomb energy is essential to the charging of a nanometer-scale trap in the oxide of a metal-oxide-semiconductor system. Traditionally the Coulomb energy calculation was performed on the basis of an interfacelike trap. In this paper, we present experimental evidence from a 1.7-nm oxide: Substantial enhancements in Coulomb energy due to the existence of a deeper trap in the oxide. Other corroborating evidence is achieved on a multiphonon theory, which can adequately elucidate the measured capture and emission kinetics. The corresponding configuration coordinate diagrams are established. We further elaborate on the clarification of the Coulomb energy and differentiate it from that in memories containing nanocrystals or quantum dots in the oxide. Some critical issues encountered in the work are addressed as well.