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dc.contributor.authorChen, Pai-Yuen_US
dc.contributor.authorLin, Binbinen_US
dc.contributor.authorWang, I-Tingen_US
dc.contributor.authorHou, Tuo-Hungen_US
dc.contributor.authorYe, Jiepingen_US
dc.contributor.authorVrudhula, Sarmaen_US
dc.contributor.authorSeo, Jae-sunen_US
dc.contributor.authorCao, Yuen_US
dc.contributor.authorYu, Shimengen_US
dc.date.accessioned2016-03-28T00:05:45Z-
dc.date.available2016-03-28T00:05:45Z-
dc.date.issued2015-01-01en_US
dc.identifier.isbn978-1-4673-8388-2en_US
dc.identifier.issn1933-7760en_US
dc.identifier.urihttp://hdl.handle.net/11536/129821-
dc.description.abstractThe cross-point array architecture with resistive synaptic devices has been proposed for on-chip implementation of weighted sum and weight update in the training process of learning algorithms. However, the non-ideal properties of the synaptic devices available today, such as the nonlinearity in weight update, limited ON/OFF range and device variations, can potentially hamper the learning accuracy. This paper focuses on the impact of these realistic properties on the learning accuracy and proposes the mitigation strategies. Unsupervised sparse coding is selected as a case study algorithm. With the calibration of the realistic synaptic behavior from the measured experimental data, our study shows that the recognition accuracy of MNIST handwriting digits degrades from similar to 97 % to similar to 65 %. To mitigate this accuracy loss, the proposed strategies include 1) the smart programming schemes for achieving linear weight update; 2) a dummy column to eliminate the off-state current; 3) the use of multiple cells for each weight element to alleviate the impact of device variations. With the improved synaptic behavior by these strategies, the accuracy increases back to similar to 95 %, enabling the reliable integration of realistic synaptic devices in the neuromorphic systems.en_US
dc.language.isoen_USen_US
dc.subjectmachine learningen_US
dc.subjectneuromorphic computingen_US
dc.subjectcross-point arrayen_US
dc.subjectresistive memoryen_US
dc.subjectsynaptic deviceen_US
dc.titleMitigating Effects of Non-ideal Synaptic Device Characteristics for On-chip Learningen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2015 IEEE/ACM INTERNATIONAL CONFERENCE ON COMPUTER-AIDED DESIGN (ICCAD)en_US
dc.citation.spage194en_US
dc.citation.epage199en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000368929600029en_US
dc.citation.woscount0en_US
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