Ion-channeling studies of InAs/GaAs quantum dots

doi:10.1016/j.nimb.2005.07.094

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DC 欄位	值	語言
dc.contributor.author	Niu, H	en_US
dc.contributor.author	Chen, CH	en_US
dc.contributor.author	Wang, HY	en_US
dc.contributor.author	Wu, SC	en_US
dc.contributor.author	Lee, CP	en_US
dc.date.accessioned	2014-12-08T15:18:00Z	-
dc.date.available	2014-12-08T15:18:00Z	-
dc.date.issued	2005-12-01	en_US
dc.identifier.issn	0168-583X	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.nimb.2005.07.094	en_US
dc.identifier.uri	http://hdl.handle.net/11536/13010	-
dc.description.abstract	Determination of the strains in and around the quantum dots is important both to assess the results of the epitaxially grown thin film and to explain the optical performance of quantum dots samples. A series of InAs/GaAs quantum dots samples were fabricated by MBE in Stranski-Krastanov growth mode. The preliminary results of ion-channeling observations along < 001 > growth direction and < 011 > direction will be presented and discussed briefly. (c) 2005 Elsevier B.V. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	quantum dots	en_US
dc.subject	GaAs	en_US
dc.subject	InAs	en_US
dc.subject	ion-channeling	en_US
dc.title	Ion-channeling studies of InAs/GaAs quantum dots	en_US
dc.type	Article; Proceedings Paper	en_US
dc.identifier.doi	10.1016/j.nimb.2005.07.094	en_US
dc.identifier.journal	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS	en_US
dc.citation.volume	241	en_US
dc.citation.issue	1-4	en_US
dc.citation.spage	470	en_US
dc.citation.epage	474	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000234260000099	-
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