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dc.contributor.authorCheng, HMen_US
dc.contributor.authorHsu, HCen_US
dc.contributor.authorYang, Sen_US
dc.contributor.authorWu, CYen_US
dc.contributor.authorLee, YCen_US
dc.contributor.authorLin, LJen_US
dc.contributor.authorHsieh, WFen_US
dc.date.accessioned2014-12-08T15:18:00Z-
dc.date.available2014-12-08T15:18:00Z-
dc.date.issued2005-12-01en_US
dc.identifier.issn0957-4484en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0957-4484/16/12/025en_US
dc.identifier.urihttp://hdl.handle.net/11536/13017-
dc.description.abstractVertically well-aligned ZnO nanorods were synthesized without employing any metal catalysts on various substrates including glass, Si(111), 6H-SiC(0001) and sapphire (0001), which were pre-coated with c-oriented ZnO buffer layers, by simple physical vapour deposition. The alignments of the ZnO nanorods on the different substrates depend on the crystallographic alignments of the pre-coated ZnO buffer layers. The ZnO nanorods grown on glass and Si(111) are vertically aligned but randomly oriented in the in-plane direction. In contrast, the vertically aligned ZnO nanorods on 6H-SiC(0001) and sapphire (0001) show an in-plane alignment with azimuthally sixfold symmetry, which indicates the epitaxial relationship between ZnO and the substrate. Similarly, photoluminescence measurements show the distinct appearance of ZnO nanorods on different substrates. Besides the UV band, which was attributed to the recombination of free excitons near the band edge, defect-related visible emissions were also observed for the samples grown on both glass and Si(111) substrates. However, the ZnO nanorods exhibit only strong band edge emission peaks with no noticeable deep level emissions when grown on the 6H-SiC(0001) and sapphire (0001) substrates, which confirms the good crystalline and optical quality of the epitaxial ZnO nanorods.en_US
dc.language.isoen_USen_US
dc.titleThe substrate effect on the in-plane orientation of vertically well-aligned ZnO nanorods grown on ZnO buffer layersen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0957-4484/16/12/025en_US
dc.identifier.journalNANOTECHNOLOGYen_US
dc.citation.volume16en_US
dc.citation.issue12en_US
dc.citation.spage2882en_US
dc.citation.epage2886en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000234304000033-
dc.citation.woscount28-
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