| Title: | 前瞻電阻式記憶體元件之新結構與新應用研究( II ) Study on Novel Structures and New Applications in Advanced Resistive Random Access Memory( II ) |
| Authors: | 施敏 SZE SIMON MIN 國立交通大學電子工程學系及電子研究所 |
| Issue Date: | 2015 |
| Gov't Doc #: | MOST104-2221-E009-009 |
| URI: | http://hdl.handle.net/11536/130205 https://www.grb.gov.tw/search/planDetail?id=11493199&docId=465469 |
| Appears in Collections: | 研究計畫 |
- 前瞻電阻式記憶體元件之新結構與新應用研究( I ) / 施敏;SZE SIMON MIN
- 前瞻新結構電阻式記憶體元件之製作( I ) / 施敏;SZE SIMON MIN
- 電阻式記憶體新穎材料之開發與機制研究( I ) / 施敏;SZE SIMON MIN
- Novel Two-Bit-per-Cell Resistive-Switching Memory for Low-Cost Embedded Applications / Wu, Shih-Chieh;Lo, Chieh;Hou, Tuo-Hung
- Voltage-polarity-independent and high-speed resistive switching properties of v-doped SrZrO3 thin films / Lin, Chun-Chieh;Lin, Chih-Yang;Lin, Meng-Han;Lin, Chen-Hsi;Tseng, Tseung-Yuen
- 多層堆疊氧化鉿/氧化鋁電阻轉態層之透明電阻式記憶體特性研究 / 溫岳嘉;Wun, Yue- Jia;張國明;汪大暉;Chang, Kow-Ming
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