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dc.contributor.authorChen, CFen_US
dc.contributor.authorLo, SFen_US
dc.contributor.authorChen, SHen_US
dc.date.accessioned2014-12-08T15:02:39Z-
dc.date.available2014-12-08T15:02:39Z-
dc.date.issued1996-05-01en_US
dc.identifier.issn0925-9635en_US
dc.identifier.urihttp://hdl.handle.net/11536/1303-
dc.description.abstractProducing impurity-doped diamond films is a critical task for modern electronic applications. In this study, the effects of phosphorus in the gas phase on the morphological features of polycrystalline diamond films were investigated. The diamond films were prepared on n-type Si(100) substrates by the microwave plasma chemical vapour deposition. A trimethyl-phosphite vapour was introduced to the CH4-CO2 gas mixture as a dopant source. Surface morphology changed from well-defined facets to ball-like features by increasing the dopant concentration in the gas phase. Phosphorus-doped diamond films of good quality and well defined facets could be obtained by reducing the carbon concentration of reactant gases. This reduction could be achieved by decreasing the CH4 flow rates during the deposition process. An increase in the the dopant source caused the growth rate to become lower, the nucleation density to reduce drastically, and the relative intensity of XRD characteristic (110) peak to increase significantly.en_US
dc.language.isoen_USen_US
dc.subjectP-doped diamond filmsen_US
dc.subjecttrimethyl-phosphiteen_US
dc.subjectXRD characteristicen_US
dc.subjectFourier transform infrared spectroscopy (FTIR)en_US
dc.titleThe synthesis and characterization of phosphorus-doped diamond films using trimethyl-phosphite as a doping sourceen_US
dc.typeArticleen_US
dc.identifier.journalDIAMOND AND RELATED MATERIALSen_US
dc.citation.volume5en_US
dc.citation.issue6-8en_US
dc.citation.spage766en_US
dc.citation.epage770en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
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