Reduced temperature-quenching of photoluminescence from indium nitride nanotips grown by metalorganic chemical vapor deposition

Abstract

We report metalorganic chemical vapor deposition of indium nitride (InN) nanotips with apex angles of 10 degrees and length and base diameter of around 1 mu m and 200 nm, respectively. The structure of the hexagonal InN nanotips growing along [002] was studied by electron microscopy and x-ray diffraction, and the optical properties were studied using temperature-dependent photoluminescence (PL) measurements. A narrow emission peak with a 18 meV full width at half maximum positioned at 0.77 eV was obtained with no visible emission. A PL quenching of only 14% was observed with a temperature scan of 15-320 K. (C) 2005 American Institute of Physics.