標題: Reduced temperature-quenching of photoluminescence from indium nitride nanotips grown by metalorganic chemical vapor deposition
作者: Shi, SC
Chen, CF
Hsu, GM
Hwang, JS
Chattopadhyay, S
Lan, ZH
Chen, KH
Chen, LC
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 14-十一月-2005
摘要: We report metalorganic chemical vapor deposition of indium nitride (InN) nanotips with apex angles of 10 degrees and length and base diameter of around 1 mu m and 200 nm, respectively. The structure of the hexagonal InN nanotips growing along [002] was studied by electron microscopy and x-ray diffraction, and the optical properties were studied using temperature-dependent photoluminescence (PL) measurements. A narrow emission peak with a 18 meV full width at half maximum positioned at 0.77 eV was obtained with no visible emission. A PL quenching of only 14% was observed with a temperature scan of 15-320 K. (C) 2005 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2128484
http://hdl.handle.net/11536/13065
ISSN: 0003-6951
DOI: 10.1063/1.2128484
期刊: APPLIED PHYSICS LETTERS
Volume: 87
Issue: 20
結束頁: 
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