Full metadata record
DC FieldValueLanguage
dc.contributor.authorChu, JTen_US
dc.contributor.authorKao, CCen_US
dc.contributor.authorHuang, HWen_US
dc.contributor.authorLiang, WDen_US
dc.contributor.authorChu, CFen_US
dc.contributor.authorLu, TCen_US
dc.contributor.authorKuo, HCen_US
dc.contributor.authorWang, SCen_US
dc.date.accessioned2014-12-08T15:18:06Z-
dc.date.available2014-12-08T15:18:06Z-
dc.date.issued2005-11-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.44.7910en_US
dc.identifier.urihttp://hdl.handle.net/11536/13086-
dc.description.abstractLarge-area p-side-down InGaN light-emitting diodes (LEDs) 1000 x 1000 mu m(2) in size have been fabricated by laser lift-off (LLO). The p-side-down LEDs with different geometric patterns of n-electrodes were fabricated to investigate electrode pattern-dependent optical characteristics. The current crowding effect was observed in the large-area p-side-down InGaN LLO-LEDs. A LED with a well-designed n-electrode pattern shows a uniform distribution of light emission and a higher output power due to uniform current spreading. The output power saturation induced by the current crowding effect was investigated. In the absence of a transparent contact layer for current spreading, the n-electrode pattern has a marked influence on the current distribution and the consequent light output power of the large-area p-side-down LEDs.en_US
dc.language.isoen_USen_US
dc.subjectGaN LEDsen_US
dc.subjectlaser lift-off (LLO)en_US
dc.subjectwafer bondingen_US
dc.subjectlarge-area light-emitting diode (LED)en_US
dc.titleEffects of different n-electrode patterns on optical characteristics of large-area p-side-down InGaN light-emitting diodes fabricated by laser lift-offen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.44.7910en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.citation.volume44en_US
dc.citation.issue11en_US
dc.citation.spage7910en_US
dc.citation.epage7912en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000233437400032-
dc.citation.woscount17-
Appears in Collections:Articles


Files in This Item:

  1. 000233437400032.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.