标题: | Effects of different n-electrode patterns on optical characteristics of large-area p-side-down InGaN light-emitting diodes fabricated by laser lift-off |
作者: | Chu, JT Kao, CC Huang, HW Liang, WD Chu, CF Lu, TC Kuo, HC Wang, SC 光电工程学系 Department of Photonics |
关键字: | GaN LEDs;laser lift-off (LLO);wafer bonding;large-area light-emitting diode (LED) |
公开日期: | 1-十一月-2005 |
摘要: | Large-area p-side-down InGaN light-emitting diodes (LEDs) 1000 x 1000 mu m(2) in size have been fabricated by laser lift-off (LLO). The p-side-down LEDs with different geometric patterns of n-electrodes were fabricated to investigate electrode pattern-dependent optical characteristics. The current crowding effect was observed in the large-area p-side-down InGaN LLO-LEDs. A LED with a well-designed n-electrode pattern shows a uniform distribution of light emission and a higher output power due to uniform current spreading. The output power saturation induced by the current crowding effect was investigated. In the absence of a transparent contact layer for current spreading, the n-electrode pattern has a marked influence on the current distribution and the consequent light output power of the large-area p-side-down LEDs. |
URI: | http://dx.doi.org/10.1143/JJAP.44.7910 http://hdl.handle.net/11536/13086 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.44.7910 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS |
Volume: | 44 |
Issue: | 11 |
起始页: | 7910 |
结束页: | 7912 |
显示于类别: | Articles |
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