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dc.contributor.authorJuan, CPen_US
dc.contributor.authorTsai, CCen_US
dc.contributor.authorChen, KHen_US
dc.contributor.authorChen, LCen_US
dc.contributor.authorCheng, HGCen_US
dc.date.accessioned2014-12-08T15:18:07Z-
dc.date.available2014-12-08T15:18:07Z-
dc.date.issued2005-11-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.44.8231en_US
dc.identifier.urihttp://hdl.handle.net/11536/13088-
dc.description.abstractThe effects of oxygen plasma posttreatment (PPT) on the morphology and field emission properties of carbon nanotube (CNT) arrays grown on silicon substrates are proposed and experimental results are reported. Oxygen PPT led to an enhancement in the emission properties of CNTs, which showed an increase in total emission current density and a decrease in turn-on field after plasma treatment. Scanning electron microscopy (SEM) images showed reduced densities of the CNTs, which resulted in a decrease of the screening effect in the electric field. Raman spectra showed an increase in the number of defects which served as field-emission sites when the plasma power or treatment time with the plasma increased. Transmission electron microscopy (TEM) images were used to identify the quality of the nanotubes, so that we could clearly find evidences of improvement in the field emission properties after plasma treatment. The measurement of electrical characteristics revealed improved field emission properties under proper plasma conditions. The turn-on field decreased from 4.8 to 2.5 V/mu m, and the emission current density increased from 78.7 mu A/cm(2) to 18 mA/cm(2) at an applied field of 5.5 V/mu m.en_US
dc.language.isoen_USen_US
dc.subjectcarbon nanotubes (CNTs)en_US
dc.subjectfield emissionen_US
dc.subjectplasma posttreatment (PPT) transmission electron microscopy (TEM)en_US
dc.titleEffects of high-density oxygen plasma posttreatment on field emission properties of carbon nanotube field-emission displaysen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.44.8231en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.citation.volume44en_US
dc.citation.issue11en_US
dc.citation.spage8231en_US
dc.citation.epage8236en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000233437400104-
dc.citation.woscount12-
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