| 標題: | 應用氧化物半導體薄膜電晶體之反相器的研製 Fabrication and Characterization of Oxide-Semiconductor TFT-Based Inverters |
| 作者: | 林鴻志 LIN HORNG-CHIH 國立交通大學電子工程學系及電子研究所 |
| 公開日期: | 2016 |
| 官方說明文件#: | MOST104-2221-E009-073-MY2 |
| URI: | http://hdl.handle.net/11536/130958 https://www.grb.gov.tw/search/planDetail?id=11722782&docId=479822 |
| Appears in Collections: | Research Plans |
- 應用氧化物半導體薄膜電晶體之反相器的研製 / 林鴻志;LIN HORNG-CHIH
- High-gain complementary inverter with InGaZnO/pentacene hybrid ambipolar thin film transistors / Liu, Po-Tsun;Chou, Yi-Teh;Teng, Li-Feng;Fuh, Chur-Shyang
- A Novel Scheme for Fabricating CMOS Inverters With Poly-Si Nanowire Channels / Kuo, Chia-Hao;Lin, Horng-Chih;Lee, I-Che;Cheng, Huang-Chung;Huang, Tiao-Yuan
- 非晶系氧化物半導體之薄膜電晶體元件技術研究 / 鄒一德;Chou, Yi-Teh;劉柏村;Liu, Po-Tsun
- Anomalous p-channel amorphous oxide transistors based on tin oxide and their complementary circuits / Ou, Chun-Wei;Ho, Zhong Yo;Chuang, You-Che;Cheng, Shiau-Shin;Wu, Meng-Chyi
- Field electron emission from C-based emitters and devices / Chen, LC;Hong, WK;Tarntair, FG;Chen, KJ;Lin, JB
Loading...