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dc.contributor.authorYang, CCen_US
dc.contributor.authorChen, SYen_US
dc.contributor.authorLee, HYen_US
dc.date.accessioned2014-12-08T15:18:09Z-
dc.date.available2014-12-08T15:18:09Z-
dc.date.issued2005-11-01en_US
dc.identifier.issn1071-1023en_US
dc.identifier.urihttp://dx.doi.org/10.1116/1.2102967en_US
dc.identifier.urihttp://hdl.handle.net/11536/13113-
dc.description.abstractHigh-density ZnO nanorods were vertically grown on Si coated with ZnO film (ZnO/Si substrate) from aqueous solution at low temperatures. The ZnO nanorods after annealed in various atmospheres still present good c-axis crystalline character but exhibit remarkable differences in photoluminescence (PL) properties. Enhancement of PL properties due to N-2-atmosphere annealing for ultraviolet emission can be attributed to the reduction of defect density because the nonparamagnetic singly ionized state (N-) can easily occupy the oxygen vacancies as evidenced by Raman spectroscopy and electron paramagnetic resonance spectrometry. The extended x-ray absorption fine structure reveals that the annealing atmosphere shows no apparent influence on the deep-level defects of ZnO nanorods except that some ions are possibly trapped or adsorbed on the surface of the ZnO nanorods. (c) 2005 American Vacuum Society.en_US
dc.language.isoen_USen_US
dc.titlePhysical characterization of ZnO nanorods grown on Si from aqueous solution and annealed at various atmospheresen_US
dc.typeArticleen_US
dc.identifier.doi10.1116/1.2102967en_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Ben_US
dc.citation.volume23en_US
dc.citation.issue6en_US
dc.citation.spage2347en_US
dc.citation.epage2350en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000234613200019-
dc.citation.woscount5-
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