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dc.contributor.authorLin, CCen_US
dc.contributor.authorChen, PLen_US
dc.contributor.authorLin, CTen_US
dc.contributor.authorKuo, CTen_US
dc.date.accessioned2014-12-08T15:18:10Z-
dc.date.available2014-12-08T15:18:10Z-
dc.date.issued2005-11-01en_US
dc.identifier.issn0925-9635en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.diamond.2005.06.045en_US
dc.identifier.urihttp://hdl.handle.net/11536/13127-
dc.description.abstractThe main purpose of this research was to develop an Integrated Circuit compatible process to grow the horizontally-oriented carbon nanotubes (CNTs) across the trenches of the patterned Si wafer, which was produced by conventional photolithography technique. The selectivity of tile process is based oil the difference ill electrical conductivity between amorphous silicon (a:Si) and silicon nitride (Si3N4), where the catalyst can be much easier deposited by electroless plating on the a:Si part of the pattern. The selectivity is also based oil greater chemical reactivity of the catalyst with a:Si to form silicides, instead of with Si3N4. Furthermore, the Si3N4 barrier layer of the pattern was designed oil top of tile a:Si layer to guide the growth of CNTs in horizontal direction to bridge tile trenches of tile pattern. The as-deposited catalysts were examined by Auger electron spectroscopy (AES). The catalyst-coated pattern was pretreated in hydrogen plasnia and followed by CNT growth in a microwave plasina chemical vapor deposition (MPCVD) system. The CNT bridges were characterized by scanning electron microscopy (SEM), transmission electron rnicroscopy (TEM), high-resolution TEM (HRTEM), and I-V measurements. Under tile present deposition conditions, TEM and HRTEJM examinations indicate that the deposited nanostructures are bamboo-like InUltiwalled carbon nanOtLibes (MWNTs) with a wall thickness of 20 similar to 30 graphene layers. Electrical conductivity of the as-deposited MWNTs call be greatly improved by subjecting to 760 degrees C heat treatment under nitrogen atmosphere. The results demonstrate that the amounts of' CNTs and bridges are tunable with tile Ni catalyst plating time. Under the present experimental configuration and at a catalyst plating time of 20 s, countable numbers of bridges call be obtained, which are selectively and horizontally grown oil the areas of the pattern with Ni catalyst. This process call be a step approaching the application of CNTs in electronic devices. (c) 2005 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectcarbon nanotubcs (CNTs)en_US
dc.subjectelectroless platingen_US
dc.subjectselective deposition processen_US
dc.subjectmicrowave plasma chemical vapor deposition (MPCVD)en_US
dc.titleSelective growth of horizontally-oriented carbon nanotube bridges on patterned silicon wafers by electroless plating Ni catalystsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.diamond.2005.06.045en_US
dc.identifier.journalDIAMOND AND RELATED MATERIALSen_US
dc.citation.volume14en_US
dc.citation.issue11-12en_US
dc.citation.spage1867en_US
dc.citation.epage1871en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000233983600028-
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