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dc.contributor.authorPeng, PCen_US
dc.contributor.authorChang, YHen_US
dc.contributor.authorKuo, HCen_US
dc.contributor.authorTsai, WKen_US
dc.contributor.authorLin, Gen_US
dc.contributor.authorLin, CTen_US
dc.contributor.authorYu, HCen_US
dc.contributor.authorYang, HPen_US
dc.contributor.authorHsiao, RSen_US
dc.contributor.authorLin, KFen_US
dc.contributor.authorChi, JYen_US
dc.contributor.authorChi, Sen_US
dc.contributor.authorWang, SCen_US
dc.date.accessioned2014-12-08T15:18:11Z-
dc.date.available2014-12-08T15:18:11Z-
dc.date.issued2005-10-27en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://dx.doi.org/10.1049/el:20053072en_US
dc.identifier.urihttp://hdl.handle.net/11536/13154-
dc.description.abstractA 1.3 mu m quantum dot vertical-cavity surface-emitting laser (QD VCSEL) with external light injection is presented, having been experimentally demonstrated. The QD VCSEL is fabricated on GaAs substrate. The 3 dB frequency response of the QD VCSEL based on the TO-Can package is enhanced from the free-running 1.75 to 7.44 GHz with the light injection technique.en_US
dc.language.isoen_USen_US
dc.title1.3 mu m quantum dot vertical-cavity surface-emitting laser with external light injectionen_US
dc.typeArticleen_US
dc.identifier.doi10.1049/el:20053072en_US
dc.identifier.journalELECTRONICS LETTERSen_US
dc.citation.volume41en_US
dc.citation.issue22en_US
dc.citation.spage1222en_US
dc.citation.epage1223en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000233454800015-
dc.citation.woscount2-
Appears in Collections:Articles


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