1.3 mu m quantum dot vertical-cavity surface-emitting laser with external light injection

doi:10.1049/el:20053072

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Peng, PC	en_US
dc.contributor.author	Chang, YH	en_US
dc.contributor.author	Kuo, HC	en_US
dc.contributor.author	Tsai, WK	en_US
dc.contributor.author	Lin, G	en_US
dc.contributor.author	Lin, CT	en_US
dc.contributor.author	Yu, HC	en_US
dc.contributor.author	Yang, HP	en_US
dc.contributor.author	Hsiao, RS	en_US
dc.contributor.author	Lin, KF	en_US
dc.contributor.author	Chi, JY	en_US
dc.contributor.author	Chi, S	en_US
dc.contributor.author	Wang, SC	en_US
dc.date.accessioned	2014-12-08T15:18:11Z	-
dc.date.available	2014-12-08T15:18:11Z	-
dc.date.issued	2005-10-27	en_US
dc.identifier.issn	0013-5194	en_US
dc.identifier.uri	http://dx.doi.org/10.1049/el:20053072	en_US
dc.identifier.uri	http://hdl.handle.net/11536/13154	-
dc.description.abstract	A 1.3 mu m quantum dot vertical-cavity surface-emitting laser (QD VCSEL) with external light injection is presented, having been experimentally demonstrated. The QD VCSEL is fabricated on GaAs substrate. The 3 dB frequency response of the QD VCSEL based on the TO-Can package is enhanced from the free-running 1.75 to 7.44 GHz with the light injection technique.	en_US
dc.language.iso	en_US	en_US
dc.title	1.3 mu m quantum dot vertical-cavity surface-emitting laser with external light injection	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1049/el:20053072	en_US
dc.identifier.journal	ELECTRONICS LETTERS	en_US
dc.citation.volume	41	en_US
dc.citation.issue	22	en_US
dc.citation.spage	1222	en_US
dc.citation.epage	1223	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000233454800015	-
dc.citation.woscount	2	-
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