次7奈米鰭式元件世代新穎元件架構與通道材料之開發( II )

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	簡昭欣	zh_TW
dc.contributor.author	葉文冠	zh_TW
dc.date.accessioned	2016-12-20T03:56:42Z	-
dc.date.available	2016-12-20T03:56:42Z	-
dc.date.issued	2016	en_US
dc.identifier.govdoc	MOST105-2119-M009-004	zh_TW
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=11842146&docId=483809	en_US
dc.identifier.uri	http://hdl.handle.net/11536/131766	-
dc.description.abstract		zh_TW
dc.description.abstract		en_US
dc.description.sponsorship	科技部	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject		zh_TW
dc.subject		en_US
dc.title	次7奈米鰭式元件世代新穎元件架構與通道材料之開發( II )	zh_TW
dc.title	Exploration of Novel Device Structure and New Channel Material for Sub-7nm Technology Node Finfet( II )	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子工程學系及電子研究所	zh_TW
顯示於類別：	研究計畫