完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Hou, CY | en_US |
dc.contributor.author | Wu, YCS | en_US |
dc.date.accessioned | 2014-12-08T15:18:15Z | - |
dc.date.available | 2014-12-08T15:18:15Z | - |
dc.date.issued | 2005-10-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.44.7327 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/13192 | - |
dc.description.abstract | The Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (a-Si) has been used to fabricate low-temperature polycrystalline silicon thin-film transistors. Three stages have been identified in the NILC process: (1) the formation of NiSi(2), precipitates, (2) the nucleation of crystalline Si (c-Si) on NiSi(2) precipitates, and (3) the subsequent migration of NiSi(2) precipitates and growth of c-Si. In this study, a bending fixture was used to investigate the effects of tensile stress oil the growth of NILC. It was found that tensile stress did not enhance NiSi(2) formation and c-Si nucleation stages, but enhanced the c-Si growth stage. It was also found that compressive stress did not change NILC rate. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | amorphous silicon | en_US |
dc.subject | polycrystalline silicon | en_US |
dc.subject | crystalline silicon | en_US |
dc.subject | Ni-metal-induced lateral crystallization | en_US |
dc.subject | NILC | en_US |
dc.subject | tensile stress and thin-film transistor | en_US |
dc.title | Effects of tensile stress on growth of Ni-metal-induced lateral crystallization of amorphous silicon | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/JJAP.44.7327 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | en_US |
dc.citation.volume | 44 | en_US |
dc.citation.issue | 10 | en_US |
dc.citation.spage | 7327 | en_US |
dc.citation.epage | 7331 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000232739300025 | - |
dc.citation.woscount | 9 | - |
顯示於類別: | 期刊論文 |