Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 張國明 | zh_TW |
dc.date.accessioned | 2016-12-20T03:56:53Z | - |
dc.date.available | 2016-12-20T03:56:53Z | - |
dc.date.issued | 2016 | en_US |
dc.identifier.govdoc | MOST105-2221-E009-150 | zh_TW |
dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=11903922&docId=492321 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/131972 | - |
dc.description.abstract | zh_TW | |
dc.description.abstract | en_US | |
dc.description.sponsorship | 科技部 | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.subject | zh_TW | |
dc.subject | en_US | |
dc.title | 關鍵新穎技術大氣電漿沉積高品質薄膜鎵鋅氧化物開發及其高可靠度平面顯 示器薄膜電晶體之製作(II) | zh_TW |
dc.title | Developement of High Quality Gzo Thin Films Deposited by Novel Appecvd System and Fabrication of High-Reliability Gzo Tft(Ii)(Iii) | en_US |
dc.type | Plan | en_US |
dc.contributor.department | 國立交通大學電子工程學系及電子研究所 | zh_TW |
Appears in Collections: | Research Plans |