HIGH EFFICIENCY GALLIUM ARSENIDE SOLAR CELLS USING INDIUM-TIN-OXIDE NANO-COLUMNS

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chang, C. H.	en_US
dc.contributor.author	Yu, Peichen	en_US
dc.contributor.author	Chiu, C. H.	en_US
dc.contributor.author	Kuo, H. C.	en_US
dc.date.accessioned	2014-12-08T15:02:40Z	-
dc.date.available	2014-12-08T15:02:40Z	-
dc.date.issued	2008	en_US
dc.identifier.isbn	978-1-4244-1640-0	en_US
dc.identifier.issn	0160-8371	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1319	-
dc.description.abstract	An array of conductive Indium-Tin-Oxide (ITO) nano-columns is deposited on GaAs solar cells using the oblique-angle electron-beam deposition method. Calculations based on a rigorous coupled-wave analysis method show that such ITO nano-columns offer superior angular and spectral anti-reflective (AR) properties. The optical characteristics of the ITO nano-columns are described. The conversion efficiency of GaAs solar cells with ITO nano-columns as the AR coating is increased by 23%, mainly limited by the quantum efficiency at the wavelengths below 600nm.	en_US
dc.language.iso	en_US	en_US
dc.title	HIGH EFFICIENCY GALLIUM ARSENIDE SOLAR CELLS USING INDIUM-TIN-OXIDE NANO-COLUMNS	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	PVSC: 2008 33RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-4	en_US
dc.citation.spage	487	en_US
dc.citation.epage	490	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000273995000111	-
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