以氮離子佈植及選擇性矽磊晶成長研發元件隔離技術

Title:	以氮離子佈植及選擇性矽磊晶成長研發元件隔離技術 A New Derice Isotation Process Using Nition Implantation And Selective Silicon Epitaxy Growth
Authors:	羅正忠交通大學電子研究所
Keywords:	;
Issue Date:	1993
Abstract:
Gov't Doc #:	NSC82-0404-E009-260
URI:	https://www.grb.gov.tw/search/planDetail?id=46005&docId=6601 http://hdl.handle.net/11536/132163
Appears in Collections:	Research Plans