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dc.contributor.authorFu, Yanmingen_US
dc.contributor.authorDong, Chung-Lien_US
dc.contributor.authorLee, Wan-Yien_US
dc.contributor.authorChen, Jieen_US
dc.contributor.authorGuo, Penghuien_US
dc.contributor.authorZhao, Liangen_US
dc.contributor.authorShen, Shaohuaen_US
dc.date.accessioned2017-04-21T06:56:44Z-
dc.date.available2017-04-21T06:56:44Z-
dc.date.issued2016-07en_US
dc.identifier.urihttp://dx.doi.org/10.1002/cnma.201600024en_US
dc.identifier.urihttp://hdl.handle.net/11536/132569-
dc.description.abstractIn this study, Nb-doped alpha-Fe2O3 nanorod photoanodes were prepared via a facile solution-based process by directly adding NbCl5 in the aqueous solution. The morphology and electronic structure of Nb-doped alpha-Fe2O3 films depended strongly on the dopant concentrations. Compared with the undoped sample, the optimal Nb-doped alpha-Fe2O3 film showed an approximately 4-fold photocurrent increase under solar light at 1.0 V versus Ag/AgCl, and the incident photon-to-current conversion efficiency was increased by 2.5 times, reaching 13.7% at 350 nm and 1.23 V versus RHE. The enhancement in PEC activity, as induced by moderate Nb doping, was attributed to the increased charge carrier density for promoted charge transfer ability as well as the smaller nanorod diameter for shortened charge transfer distance. However, superfluous Nb dopants would destroy the nanorod structure and greatly reduce the thickness of alpha-Fe2O3 films, leading to poor optical absorption and thus decreased photoelectrochemical performance.en_US
dc.language.isoen_USen_US
dc.subjectdopingen_US
dc.subjecthematiteen_US
dc.subjectphotoanodesen_US
dc.subjectphotoelectrochemicalen_US
dc.subjectwater splittingen_US
dc.titleNb-Doped Hematite Nanorods for Efficient Solar Water Splitting: Electronic Structure Evolution versus Morphology Alterationen_US
dc.identifier.doi10.1002/cnma.201600024en_US
dc.identifier.journalCHEMNANOMATen_US
dc.citation.volume2en_US
dc.citation.issue7en_US
dc.citation.spage704en_US
dc.citation.epage711en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000383773800020en_US
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