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dc.contributor.authorPhuoc Huu Leen_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorLuo, Chih Weien_US
dc.contributor.authorLin, Jiunn-Yuanen_US
dc.contributor.authorWu, Kaung Hsiungen_US
dc.date.accessioned2017-04-21T06:56:49Z-
dc.date.available2017-04-21T06:56:49Z-
dc.date.issued2017-01-25en_US
dc.identifier.issn0925-8388en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jallcom.2016.09.109en_US
dc.identifier.urihttp://hdl.handle.net/11536/132594-
dc.description.abstractWe report the thickness (d) dependence of structural, morphological, magneto-transport properties as well as terahertz (THz) response in the 0.25-2.25 THz range of topological insulator Bi2Te3 thin films grown by pulsed laser deposition (PLD). The Bi2Te3 films exhibit a highly c-axis orientation (textured films) and two Raman-active modes of E-g(2) at 102.5 cm(-1) and A(1g)(2) at 134.8 cm(-1). The films obtain relatively low carrier concentration between 2.0 x 10(19) and 4.4 x 10(19) cm(-3). The films present two-dimensional weak (2D WAL) antilocalization magnetoresistance in a low magnetic field (B) and the 2D WAL shows thickness dependence, suggesting the presence of topological surface states (TSS). The THz transmittance increases owing to increased resistivity (associated with a decreased carrier concentration) when film thickness decreases from 152 to 16 QL. The complex conductance is well described by the Drude-Lorentz model with three components of the Drude surface, Drude bulk, and phonon. The Drude spectral weight (SW) of the surface is dominant and independent of the thickness. Besides, the Drude SW of the bulk and phonon SW linearly increase with increasing thickness. (C) 2016 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectTopological insulatoren_US
dc.subjectBismuth tellurideen_US
dc.subjectWeak antilocalizationen_US
dc.subjectTerahertz spectroscopyen_US
dc.subjectPulsed laser depositionen_US
dc.titleThickness-dependent magnetotransport properties and terahertz response of topological insulator Bi2Te3 thin filmsen_US
dc.identifier.doi10.1016/j.jallcom.2016.09.109en_US
dc.identifier.journalJOURNAL OF ALLOYS AND COMPOUNDSen_US
dc.citation.volume692en_US
dc.citation.spage972en_US
dc.citation.epage979en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000386231200128en_US
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