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dc.contributor.authorFu, Sze Mingen_US
dc.contributor.authorZhong, Yan Kaien_US
dc.contributor.authorTu, Ming Hsiangen_US
dc.contributor.authorChen, Bo Rueien_US
dc.contributor.authorLin, Alberten_US
dc.date.accessioned2019-04-03T06:37:53Z-
dc.date.available2019-04-03T06:37:53Z-
dc.date.issued2016-10-26en_US
dc.identifier.issn2045-2322en_US
dc.identifier.urihttp://dx.doi.org/10.1038/srep36244en_US
dc.identifier.urihttp://hdl.handle.net/11536/132625-
dc.description.abstractBroadband perfect metamaterial absorbers have been drawing significant attention in recent years. A close-to-unity absorption over a broad spectral range is established and this facilitates many photonic applications. A more challenging goal is to construct a broadband absorber with a tailored spectral absorption. The spectral absorption control and spectral shaping are very critical in many applications, such as thermal-photovoltaic, thermal emitters, spectrum imaging system, biomedical and extraterrestrial sensing, and refractive index sensor. In this work, one-dimensional (1D) planar stacking structure is designed to achieve the ultimate goal of a functionalized absorber with a fully tailorable spectral absorption. The lithography and etching process are totally eliminated in this proposed structure, and the fabrication is fully compatible with the regular silicon IC processing. By using similar to 2 nm ultra-thin metallic layers with a 10-pair (10X) SiO2/Si3N4 integrated dielectric filter, we can achieve decent spectral response shaping. The planar configuration of the ultra-thin-metal metamaterial perfect absorber (MPA) is the key to the easy design/integration of the dielectric filters on top of the MPA. Specifically, band-rejected, high-pass, low-pass and band-pass structure are constructed successfully. Finally, experimental evidence to support our simulation result is also provided, which proves the feasibility of our proposal.en_US
dc.language.isoen_USen_US
dc.titleA fully functionalized metamaterial perfect absorber with simple design and implementationen_US
dc.typeArticleen_US
dc.identifier.doi10.1038/srep36244en_US
dc.identifier.journalSCIENTIFIC REPORTSen_US
dc.citation.volume6en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000386215200001en_US
dc.citation.woscount3en_US
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