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dc.contributor.authorHsieh, C. C.en_US
dc.contributor.authorLin, T. H.en_US
dc.contributor.authorShih, H. C.en_US
dc.contributor.authorLin, J-Yen_US
dc.contributor.authorHsu, C-Hen_US
dc.contributor.authorLuo, C. W.en_US
dc.contributor.authorWu, K. H.en_US
dc.contributor.authorUen, T. M.en_US
dc.contributor.authorJuang, J. Y.en_US
dc.date.accessioned2014-12-08T15:18:23Z-
dc.date.available2014-12-08T15:18:23Z-
dc.date.issued2009-01-01en_US
dc.identifier.issn1742-6588en_US
dc.identifier.urihttp://dx.doi.org/10.1088/1742-6596/150/4/042062en_US
dc.identifier.urihttp://hdl.handle.net/11536/13267-
dc.description.abstractThermodynamically YMnO(3) (YMO) can only exist with hexagonal structure at ambient conditions. In this study, we demonstrate that the stain between film and substrate can play an important role in forming orthorhombic YMO (o-YMO). o-YMO films with nearly perfect crystallographic orientation alignment were obtained on LaAlO(3)(110) substrates. These films allow us to unambiguously disclose the intrinsic magnetic property and electronic structure anisotropies along different crystallographic orientations. The antiferromagnetic (AFM) phase transition was around 42 K. Moreover, we observed a signature of spin reordering at lower temperatures when the applied field was parallel to the a- or c-axis. On the other hand, only the AFM transition was observed when the field is parallel to the b-axis. By comparing the X-ray absorption spectroscopy (XAS) results to standard manganese oxides, YMnO(3) exhibits the dominant Mn(+3) characteristics as that obtained from the standard Mn(2)O(3) powder. The polarization dependent XAS also revealed anisotropic bonding behavior along each crystalline axis.en_US
dc.language.isoen_USen_US
dc.titleElectronic Structure and Magnetic Anisotropies in Orthorhombic Multiferroic YMnO(3) Thin Filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/1742-6596/150/4/042062en_US
dc.identifier.journal25TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT25), PART 4: QUANTUM PHASE TRANSITIONS AND MAGNETISMen_US
dc.citation.volume150en_US
dc.citation.issueen_US
dc.citation.spageen_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
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