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dc.contributor.authorLee, P. W.en_US
dc.contributor.authorSingh, V. N.en_US
dc.contributor.authorGuo, G. Y.en_US
dc.contributor.authorLiu, H. -J.en_US
dc.contributor.authorLin, J. -C.en_US
dc.contributor.authorChu, Y. -H.en_US
dc.contributor.authorChen, C. H.en_US
dc.contributor.authorChu, M. -W.en_US
dc.date.accessioned2019-04-03T06:39:36Z-
dc.date.available2019-04-03T06:39:36Z-
dc.date.issued2016-09-01en_US
dc.identifier.issn2041-1723en_US
dc.identifier.urihttp://dx.doi.org/10.1038/ncomms12773en_US
dc.identifier.urihttp://hdl.handle.net/11536/132689-
dc.description.abstractThe metallic interface between insulating LaAlO3 and SrTiO3 opens up the field of oxide electronics. With more than a decade of researches on this heterostructure, the origin of the interfacial conductivity, however, remains unsettled. Here we resolve this long-standing puzzle by atomic-scale observation of electron-gas formation for screening hidden lattice instabilities, rejuvenated near the interface by epitaxial strain. Using atomic-resolution imaging and electron spectroscopy, the generally accepted notions of polar catastrophe and cation intermixing for the metallic interface are discounted. Instead, the conductivity onset at the critical thickness of 4-unit cell LaAlO3 on SrTiO3 substrate is accompanied with head-to-head ferroelectric-like polarizations across the interface due to strain-rejuvenated ferroelectric-like instabilities in the materials. The divergent depolarization fields of the head-to-head polarizations cast the interface into an electron reservoir, forming screening electron gas in SrTiO3 with LaAlO3 hosting complementary localized holes. The ferroelectriclike polarizations and electron-hole juxtaposition reveal the cooperative nature of metallic LaAlO3/SrTiO3.en_US
dc.language.isoen_USen_US
dc.titleHidden lattice instabilities as origin of the conductive interface between insulating LaAlO3 and SrTiO3en_US
dc.typeArticleen_US
dc.identifier.doi10.1038/ncomms12773en_US
dc.identifier.journalNATURE COMMUNICATIONSen_US
dc.citation.volume7en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000385256500003en_US
dc.citation.woscount20en_US
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