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dc.contributor.authorWen, Hua-Chiangen_US
dc.contributor.authorChou, Wu-Chingen_US
dc.contributor.authorChiang, Tun-Yuanen_US
dc.contributor.authorJeng, Yeau-Renen_US
dc.contributor.authorFan, Wen-Chungen_US
dc.date.accessioned2017-04-21T06:56:23Z-
dc.date.available2017-04-21T06:56:23Z-
dc.date.issued2017-02-05en_US
dc.identifier.issn0925-8388en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jallcom.2016.09.237en_US
dc.identifier.urihttp://hdl.handle.net/11536/132728-
dc.description.abstractWe performed cathodoluminescence (CL) investigations on GaN NCs grown using molecular beam epitaxy. Bundled GaN was used to form NCs that were deposited onto commercial sapphire templates. The structures of the bundled NCs were analyzed using nanoindentation. The samples were grown with a T-G of 700, 800, and 850 degrees C, and the H values were 7.4 +/- 0.2 and 6.4 +/- 0.2 GPa; the E values were 308.4 +/- 4.3, 296.4 +/- 3.8, and 75.5 +/- 1.4 GPa, respectively. It is suspected that the discrepancies of the mechanical parameters obtained by various indentation methods are partially a result of the stress distribution inherent in the different orientations on the sapphire substrate. A scanning electron microscopy (SEM) system equipped with CL allows the direct comparison of SEM images and CL maps, captured from exactly the same area of the samples. In addition to the SEM and CL images, photoluminescence spectroscopy (PL) profiling was obtained by collecting the 20 K PL spectra at the samples. The PL profiling enables the distinguishing of the emissions by the 5 meV of the blueshift from 3.440 to 3.445 eV due to localization effects. The bundled GaN NCs resulted from the (0002) reflection at 34.6 degrees for a wurtzite structure and a raised intensity difference when the TG was increased from 700 to 850 degrees C. The crystal texture of the GaN can influence the mechanical properties at different TG stages. (C) 2016 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectMolecular beam epitaxyen_US
dc.subjectGallium nitrideen_US
dc.subjectDesorptionen_US
dc.subjectCathodoluminescenceen_US
dc.titleUsing nanoindentation and cathodoluminescence to identify the bundled effect of gallium nitride grown by PA-MBEen_US
dc.identifier.doi10.1016/j.jallcom.2016.09.237en_US
dc.identifier.journalJOURNAL OF ALLOYS AND COMPOUNDSen_US
dc.citation.volume693en_US
dc.citation.spage615en_US
dc.citation.epage621en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000388610400078en_US
Appears in Collections:Articles