標題: Ultralow Power Resistance Random Access Memory Device and Oxygen Accumulation Mechanism in an Indium-Tin-Oxide Electrode
作者: Pan, Chih-Hung
Chang, Ting-Chang
Tsai, Tsung-Ming
Chang, Kuan-Chang
Chu, Tian-Jian
Shih, Chih-Cheng
Lin, Chih-Yang
Chen, Po-Hsun
Wu, Huaqiang
Deng, Ning
Qian, He
Sze, Simon M.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Indium-tin-oxide (ITO);low power consumption;oxygen gradient;resistance random access memory (RRAM)
公開日期: 十二月-2016
摘要: This paper proposes low power consumption resistance random access memory (RRAM) devices with indium-tin-oxide (ITO) electrodes. The development of the Internet of Things (IoT) is a trend in future technology, but the bottleneck in IoT development is high power consumption; therefore, targeting low-power-consumption memory is crucial for the IoT. ITO-capped RRAM devices have been shown to exhibit outstanding performance and low power consumption, and here, we propose an oxygen accumulation mechanism by analyzing device characteristics. We find that the conduction current mechanism will be affected by oxygen absorbance in the ITO electrode. During the forming and set processes, oxygen ions will be propelled into the ITO electrode due to its oxygen vacancy-rich property; therefore, we find Schottky emission both at high-resistance state and low-resistance state and that the device exhibits an automatic current compliance property. Varied stop-voltage measurements were carried out to verify the device mechanism. Because of its capability for oxygen storage, the thick ITO layer was confirmed to affect the characteristic due to a difference in oxygen gradient. A new structure and novel material are proposed, based on the devices with ITO electrodes to improve performance and reduce power consumption.
URI: http://dx.doi.org/10.1109/TED.2016.2615807
http://hdl.handle.net/11536/132759
ISSN: 0018-9383
DOI: 10.1109/TED.2016.2615807
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 63
Issue: 12
起始頁: 4737
結束頁: 4743
顯示於類別:期刊論文