標題: | Effects of fabrication method on defects induced by nitrogen diffusion to the hafnium oxide layer in metal-oxide-semiconductor field effect transistors |
作者: | Lu, Ying-Hsin Chang, Ting-Chang Ho, Szu-Han Chen, Ching-En Tsai, Jyun-Yu Liu, Kuan-Ju Liu, Xi-Wen Lin, Chien-yu Tseng, Tseung-Yuen Cheng, Osbert Huang, Cheng-Tung Yen, Wei-Ting 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Hafnium oxide;Fast I-V;Gate fabrication;NBTI |
公開日期: | 1-十二月-2016 |
摘要: | This study investigates how different metal gate fabrication methods induce variations in the defects which result from nitrogen diffusing into the hafnium oxide layer in metal-oxide-semiconductor field effect transistors (MOSFETs). By using the different fabrication methods of pre-TaN, post-TaN and post-TiN annealing, the work-function difference between the gate material and the semiconductor can be adjusted, leading to apparent differences in threshold voltage (V-th). In addition, the results of slow and fast I-V NBTI measurements show that the amount of the bulk trapping in the post-TiN device is the highest, followed by the post-TaN device and then the pre-TaN device. In addition, a nitrogen interstitial defect phenomenon, resulting in a temporary shift of threshold voltage (V-th) which is highest in the post-TiN the lowest in the pre-TaN device, is determined by double sweep fast I-V measurements. (C) 2016 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.tsf.2016.09.062 http://hdl.handle.net/11536/132770 |
ISSN: | 0040-6090 |
DOI: | 10.1016/j.tsf.2016.09.062 |
期刊: | THIN SOLID FILMS |
Volume: | 620 |
起始頁: | 43 |
結束頁: | 47 |
顯示於類別: | 期刊論文 |