標題: Effects of fabrication method on defects induced by nitrogen diffusion to the hafnium oxide layer in metal-oxide-semiconductor field effect transistors
作者: Lu, Ying-Hsin
Chang, Ting-Chang
Ho, Szu-Han
Chen, Ching-En
Tsai, Jyun-Yu
Liu, Kuan-Ju
Liu, Xi-Wen
Lin, Chien-yu
Tseng, Tseung-Yuen
Cheng, Osbert
Huang, Cheng-Tung
Yen, Wei-Ting
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Hafnium oxide;Fast I-V;Gate fabrication;NBTI
公開日期: 1-十二月-2016
摘要: This study investigates how different metal gate fabrication methods induce variations in the defects which result from nitrogen diffusing into the hafnium oxide layer in metal-oxide-semiconductor field effect transistors (MOSFETs). By using the different fabrication methods of pre-TaN, post-TaN and post-TiN annealing, the work-function difference between the gate material and the semiconductor can be adjusted, leading to apparent differences in threshold voltage (V-th). In addition, the results of slow and fast I-V NBTI measurements show that the amount of the bulk trapping in the post-TiN device is the highest, followed by the post-TaN device and then the pre-TaN device. In addition, a nitrogen interstitial defect phenomenon, resulting in a temporary shift of threshold voltage (V-th) which is highest in the post-TiN the lowest in the pre-TaN device, is determined by double sweep fast I-V measurements. (C) 2016 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2016.09.062
http://hdl.handle.net/11536/132770
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2016.09.062
期刊: THIN SOLID FILMS
Volume: 620
起始頁: 43
結束頁: 47
顯示於類別:期刊論文