Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wang, Jyh-Liang | en_US |
dc.contributor.author | Yang, Po-Yu | en_US |
dc.contributor.author | Hsieh, Tsang-Yen | en_US |
dc.contributor.author | Juan, Pi-Chun | en_US |
dc.date.accessioned | 2017-04-21T06:55:48Z | - |
dc.date.available | 2017-04-21T06:55:48Z | - |
dc.date.issued | 2016-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.7567/JJAP.55.01AE16 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/132785 | - |
dc.description.abstract | Hydrothermally synthesized aluminum-doped ZnO (AZO) nanostructures have been adopted in extended-gate field-effect transistor (EGFET) sensors to demonstrate the sensitive and stable pH and glucose sensing characteristics of AZO-nanostructured EGFET sensors. The AZO-nanostructured EGFET sensors exhibited the following superior pH sensing characteristics: a high current sensitivity of 0.96 mu A(1/2)/pH, a high linearity of 0.9999, less distortion of output waveforms, a small hysteresis width of 4.83 mV, good long-term repeatability, and a wide sensing range from pHs 1 to 13. The glucose sensing characteristics of AZO-nanostructured biosensors exhibited the desired sensitivity of 60.5 mu A.cm(-2).mM(-1) and a linearity of 0.9996 up to 13.9 mM. The attractive characteristics of high sensitivity, high linearity, and repeatability of using ionic AZO-nanostructured EGFET sensors indicate their potential use as electrochemical and disposable biosensors. (C) 2016 The Japan Society of Applied Physics | en_US |
dc.language.iso | en_US | en_US |
dc.title | Ionic pH and glucose sensors fabricated using hydrothermal ZnO nanostructures | en_US |
dc.identifier.doi | 10.7567/JJAP.55.01AE16 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 55 | en_US |
dc.citation.issue | 1 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000369014400064 | en_US |
Appears in Collections: | Articles |