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dc.contributor.authorHuang, Chun-Weien_US
dc.contributor.authorChen, Jui-Yuanen_US
dc.contributor.authorChiu, Chung-Huaen_US
dc.contributor.authorHsin, Cheng-Lunen_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.contributor.authorWu, Wen-Weien_US
dc.date.accessioned2017-04-21T06:56:08Z-
dc.date.available2017-04-21T06:56:08Z-
dc.date.issued2016-12en_US
dc.identifier.issn1998-0124en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s12274-016-1237-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/132789-
dc.description.abstractGraphene has demonstrated its potential in several practical applications owing to its remarkable electronic and physical properties. In this study, we successfully fabricated a suspended graphene device with a width down to 20 nm. The morphological evolution of graphene under various electric field effects was systematically examined using an in-situ transmission electron microscope (TEM). The hourglass-shaped graphene sample instantly broke apart at 7.5 mA, indicating an impressive breakdown current density. The current-carrying capacity was calculated to be similar to 1.6 x 10(9) A center dot cm(-2), which is several orders higher than that of copper. The current-carrying capacity depended on the resistivity of graphene. In addition, atomic volume changes occurred in the multilayer graphene samples due to surface diffusion and Ostwald ripening (OR), indicating that the breakdown mechanism is well approximated by the electric field. This study not only provides a theory to explain the breakdown behavior but also presents the effects on materials contacted with a graphene layer used as the transmission path.en_US
dc.language.isoen_USen_US
dc.subjectgrapheneen_US
dc.subjectbreakdownen_US
dc.subjecthigh current densityen_US
dc.subjectin-situ transmission electron microscope (TEM)en_US
dc.subjectOstwald ripeningen_US
dc.titleObserving the evolution of graphene layers at high current densityen_US
dc.identifier.doi10.1007/s12274-016-1237-0en_US
dc.identifier.journalNANO RESEARCHen_US
dc.citation.volume9en_US
dc.citation.issue12en_US
dc.citation.spage3663en_US
dc.citation.epage3670en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電機學院zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000388114400007en_US
Appears in Collections:Articles