完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lin, T. H. | en_US |
dc.contributor.author | Hsieh, C. C. | en_US |
dc.contributor.author | Shih, H. C. | en_US |
dc.contributor.author | Luo, C. W. | en_US |
dc.contributor.author | Uen, T. M. | en_US |
dc.contributor.author | Wu, K. H. | en_US |
dc.contributor.author | Lin, J-Y | en_US |
dc.contributor.author | Hsu, C-H | en_US |
dc.contributor.author | Juang, J. Y. | en_US |
dc.date.accessioned | 2014-12-08T15:18:24Z | - |
dc.date.available | 2014-12-08T15:18:24Z | - |
dc.date.issued | 2009 | en_US |
dc.identifier.issn | 1742-6588 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/13278 | - |
dc.identifier.uri | http://dx.doi.org/10.1088/1742-6596/150/4/042114 | en_US |
dc.description.abstract | The orthorhombic phase HoMnO(3) (o-HMO in Pbnm symmetry setting) thin films were prepared on LaAlO(3)(110) (LAO(110)) substrates by pulsed laser deposition. While for films grown on LAO(110) substrates, the compressive strain along the b-axis was resulted from the tensile strain in the a-c plane. The films provide the opportunity of investigating the effects of strain, hence lattice elasticity, on the physical properties of this material. For o-HMO films an antiferromagnetic ordering with T(N)similar to 42 K, irrespective to the direction of applied field was clearly observed. However, an additional magnetic ordering occurring around 26.4 K was observed when the field was applied along the c-axis of o-HMO. This transition, however, was absent when the field was applied along a-and b-axis. These results indicate that the second magnetic ordering observed along the c-axis could be more relevant to the Mn moments lying along the partially strained b direction of the o-HMO which has been theoretically expected to result in incommensurate-commensurate lock-in transition. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Effects of compressive epitaxial strain in the b-axis on the magnetization response of orthorhombic HoMnO(3) thin films | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1088/1742-6596/150/4/042114 | en_US |
dc.identifier.journal | 25TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT25), PART 4: QUANTUM PHASE TRANSITIONS AND MAGNETISM | en_US |
dc.citation.volume | 150 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000289891200114 | - |
顯示於類別: | 會議論文 |