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dc.contributor.authorLin, T. H.en_US
dc.contributor.authorHsieh, C. C.en_US
dc.contributor.authorShih, H. C.en_US
dc.contributor.authorLuo, C. W.en_US
dc.contributor.authorUen, T. M.en_US
dc.contributor.authorWu, K. H.en_US
dc.contributor.authorLin, J-Yen_US
dc.contributor.authorHsu, C-Hen_US
dc.contributor.authorJuang, J. Y.en_US
dc.date.accessioned2014-12-08T15:18:24Z-
dc.date.available2014-12-08T15:18:24Z-
dc.date.issued2009en_US
dc.identifier.issn1742-6588en_US
dc.identifier.urihttp://hdl.handle.net/11536/13278-
dc.identifier.urihttp://dx.doi.org/10.1088/1742-6596/150/4/042114en_US
dc.description.abstractThe orthorhombic phase HoMnO(3) (o-HMO in Pbnm symmetry setting) thin films were prepared on LaAlO(3)(110) (LAO(110)) substrates by pulsed laser deposition. While for films grown on LAO(110) substrates, the compressive strain along the b-axis was resulted from the tensile strain in the a-c plane. The films provide the opportunity of investigating the effects of strain, hence lattice elasticity, on the physical properties of this material. For o-HMO films an antiferromagnetic ordering with T(N)similar to 42 K, irrespective to the direction of applied field was clearly observed. However, an additional magnetic ordering occurring around 26.4 K was observed when the field was applied along the c-axis of o-HMO. This transition, however, was absent when the field was applied along a-and b-axis. These results indicate that the second magnetic ordering observed along the c-axis could be more relevant to the Mn moments lying along the partially strained b direction of the o-HMO which has been theoretically expected to result in incommensurate-commensurate lock-in transition.en_US
dc.language.isoen_USen_US
dc.titleEffects of compressive epitaxial strain in the b-axis on the magnetization response of orthorhombic HoMnO(3) thin filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/1742-6596/150/4/042114en_US
dc.identifier.journal25TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT25), PART 4: QUANTUM PHASE TRANSITIONS AND MAGNETISMen_US
dc.citation.volume150en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000289891200114-
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