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dc.contributor.authorWang, Kuang-Yuen_US
dc.contributor.authorTsai, Wan-Linen_US
dc.contributor.authorYang, Po-Yuen_US
dc.contributor.authorChou, Chia-Hsinen_US
dc.contributor.authorLiao, Chan-Yuen_US
dc.contributor.authorLi, Yu-Renen_US
dc.contributor.authorCheng, Huang-Chungen_US
dc.date.accessioned2017-04-21T06:56:08Z-
dc.date.available2017-04-21T06:56:08Z-
dc.date.issued2016-12en_US
dc.identifier.issn1533-4880en_US
dc.identifier.urihttp://dx.doi.org/10.1166/jnn.2016.13654en_US
dc.identifier.urihttp://hdl.handle.net/11536/132794-
dc.description.abstractA flexible atmospheric-pressure gas ionization sensor (GIS) with the horizontally aligned carbon nanotube (HACNT) electrodes in the planar structure has been demonstrated for the first time via the proposed rolling-down technique of CNTs. The gap between the electrodes of high-density and uniform HACNTs could be therefore precisely controlled via adjusting the length of the CNTs and the interspacing between the patterned catalysts. High-performance sensing characteristics to various gases Ar, N-2, air, and O-2 at atmospheric pressure with the breakdown voltages as low as 160, 193, 205, and 233, respectively, have been achieved with the electrode gap of 20 mu m. It is attributed to the field enhancement from the small gap and the double-side nanostructures. The superior flexibility of the proposed GIS with different bending tests has also been obtained. It reflects that the HACNTs possess excellent material properties, including great mechanical strength and good electrical conductivity. Such a simple, low-cost, and flexible GIS is promising for its applications in portable and wearable personal monitoring devices.en_US
dc.language.isoen_USen_US
dc.subjectHorizontally Aligned Carbon Nanotubeen_US
dc.subjectPDMSen_US
dc.subjectGas Ionization Sensoren_US
dc.titleFlexible Atmospheric-Pressure Gas Ionization Sensors with Horizontally Aligned Carbon Nanotube Electrodesen_US
dc.identifier.doi10.1166/jnn.2016.13654en_US
dc.identifier.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGYen_US
dc.citation.volume16en_US
dc.citation.issue12en_US
dc.citation.spage12860en_US
dc.citation.epage12865en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000387279100118en_US
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