標題: | Silicon induced stability and mobility of indium zinc oxide based bilayer thin film transistors |
作者: | Chauhan, Ram Narayan Tiwari, Nidhi Liu, Po-Tsun Shieh, Han-Ping D. Kumar, Jitendra 光電工程學系 顯示科技研究所 Department of Photonics Institute of Display |
公開日期: | 14-十一月-2016 |
摘要: | Indium zinc oxide (IZO), silicon containing IZO, and IZO/IZO: Si bilayer thin films have been prepared by dual radio frequency magnetron sputtering on glass and SiO2/Si substrates for studying their chemical compositions and electrical characteristics in order to ascertain reliability for thin film transistor (TFT) applications. An attempt is therefore made here to fabricate single IZO and IZO/IZO: Si bilayer TFTs to study the effect of film thickness, silicon incorporation, and bilayer active channel on device performance and negative bias illumination stress (NBIS) stability. TFTs with increasing single active IZO layer thickness exhibit decrease in carrier mobility but steady improvement in NBIS; the best values being mu(FE) similar to 27.0, 22.0 cm(2)/Vs and Delta(Vt)h similar to -13.00, -6.75V for a channel thickness of 7 and 27 nm, respectively. While silicon incorporation is shown to reduce the mobility somewhat, it raises the stability markedly (Delta V-th similar to -1.20V). Further, IZO (7 nm)/IZO: Si (27 nm) bilayer based TFTs display useful characteristics (field effect mobility, mu(FE) = 15.3 cm(2)/Vs and NBIS value, Delta V-th = -0.75V) for their application in transparent electronics. Published by AIP Publishing. |
URI: | http://dx.doi.org/10.1063/1.4968001 http://hdl.handle.net/11536/132816 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.4968001 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 109 |
Issue: | 20 |
顯示於類別: | 期刊論文 |