標題: Silicon induced stability and mobility of indium zinc oxide based bilayer thin film transistors
作者: Chauhan, Ram Narayan
Tiwari, Nidhi
Liu, Po-Tsun
Shieh, Han-Ping D.
Kumar, Jitendra
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
公開日期: 14-十一月-2016
摘要: Indium zinc oxide (IZO), silicon containing IZO, and IZO/IZO: Si bilayer thin films have been prepared by dual radio frequency magnetron sputtering on glass and SiO2/Si substrates for studying their chemical compositions and electrical characteristics in order to ascertain reliability for thin film transistor (TFT) applications. An attempt is therefore made here to fabricate single IZO and IZO/IZO: Si bilayer TFTs to study the effect of film thickness, silicon incorporation, and bilayer active channel on device performance and negative bias illumination stress (NBIS) stability. TFTs with increasing single active IZO layer thickness exhibit decrease in carrier mobility but steady improvement in NBIS; the best values being mu(FE) similar to 27.0, 22.0 cm(2)/Vs and Delta(Vt)h similar to -13.00, -6.75V for a channel thickness of 7 and 27 nm, respectively. While silicon incorporation is shown to reduce the mobility somewhat, it raises the stability markedly (Delta V-th similar to -1.20V). Further, IZO (7 nm)/IZO: Si (27 nm) bilayer based TFTs display useful characteristics (field effect mobility, mu(FE) = 15.3 cm(2)/Vs and NBIS value, Delta V-th = -0.75V) for their application in transparent electronics. Published by AIP Publishing.
URI: http://dx.doi.org/10.1063/1.4968001
http://hdl.handle.net/11536/132816
ISSN: 0003-6951
DOI: 10.1063/1.4968001
期刊: APPLIED PHYSICS LETTERS
Volume: 109
Issue: 20
顯示於類別:期刊論文