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dc.contributor.authorLin, Yen-Kuen_US
dc.contributor.authorNoda, Shuichien_US
dc.contributor.authorLo, Hsiao-Chiehen_US
dc.contributor.authorLiu, Shih-Chienen_US
dc.contributor.authorWu, Chia-Hsunen_US
dc.contributor.authorWong, Yuen-Yeeen_US
dc.contributor.authorLuc, Quang Hoen_US
dc.contributor.authorChang, Po-Chunen_US
dc.contributor.authorHsu, Heng-Tungen_US
dc.contributor.authorSamukawa, Seijien_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2017-04-21T06:55:58Z-
dc.date.available2017-04-21T06:55:58Z-
dc.date.issued2016-11en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2016.2609938en_US
dc.identifier.urihttp://hdl.handle.net/11536/132826-
dc.description.abstractThe electrical performances of gate-recessed AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated using the damage-free neutral beam etching (NBE) method are demonstrated. The NBE method could eliminate the plasma-induced defects generated by irradiating ultraviolet/VUV photons in the conventional inductively coupled plasma reactive ion etching method. The AlGaN/GaN HEMT device fabricated using the new gate recess process exhibited superior electrical performances, including a maximum drain current density (I-DS,I-max) of 1.54 A/mm, low 1/f noise, a current-gain cutoff frequency (f(T)) of 153 GHz, a maximum frequency of oscillation (f(MAX)) of 167 GHz, and a minimum noise figure (NFmin) of 3.28 dB with an associated gain (G(AS)) of 5.06 dB at 54 GHz. Such superior characteristics confirm the inherent advantages of adopting the damage-free NBE process in fabricating GaN devices for millimeter-wave applications.en_US
dc.language.isoen_USen_US
dc.subjectAlGaN/GaNen_US
dc.subjectHEMTen_US
dc.subjectgate recessen_US
dc.subjectneutral beam etchingen_US
dc.subjecthigh frequency measurementen_US
dc.titleAlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applicationsen_US
dc.identifier.doi10.1109/LED.2016.2609938en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume37en_US
dc.citation.issue11en_US
dc.citation.spage1395en_US
dc.citation.epage1398en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department光電系統研究所zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department國際半導體學院zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentInternational College of Semiconductor Technologyen_US
dc.identifier.wosnumberWOS:000389331100007en_US
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