完整後設資料紀錄
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dc.contributor.authorHuang, Wei-Chingen_US
dc.contributor.authorChu, Chung-Mingen_US
dc.contributor.authorHsieh, Chi-Fengen_US
dc.contributor.authorWong, Yuen-Yeeen_US
dc.contributor.authorChen, Kai-Weien_US
dc.contributor.authorLee, Wei-Ien_US
dc.contributor.authorTu, Yung-Yien_US
dc.contributor.authorChang, Edward-Yien_US
dc.contributor.authorDee, Chang Fuen_US
dc.contributor.authorMajlis, B. Y.en_US
dc.contributor.authorYap, S. L.en_US
dc.date.accessioned2017-04-21T06:55:41Z-
dc.date.available2017-04-21T06:55:41Z-
dc.date.issued2016-02en_US
dc.identifier.issn0361-5235en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s11664-015-4210-xen_US
dc.identifier.urihttp://hdl.handle.net/11536/132830-
dc.description.abstractThe influence of low-temperature AlN (LT-AlN) nucleation layer thickness on the material properties of the GaN layer grown on the double-step AlN layer is investigated. When GaN was grown without the LT-AlN nucleation layer, the GaN layer has low sheet resistance of 464 ohm/sq and the surface was decorated with pitted region. On the other hand, when a LT-AlN layer with a thickness of 5 nm was inserted, a GaN layer with sheet resistance higher than 10(6) ohm/sq was achieved. This thin nucleation layer also improved the GaN morphology, suppressed inversion domain formation, and reduced oxygen impurity incorporation. However, the surface morphology and quality of the GaN crystal were severely degraded when the LT-AlN thickness was increased to 10 nm due to the formation of disorientated grains in the LT-AlN layer.en_US
dc.language.isoen_USen_US
dc.subjectAlNen_US
dc.subjectGaNen_US
dc.subjectsurface morphologyen_US
dc.subjectpolarityen_US
dc.subjectnucleation layeren_US
dc.subjectinversion domainen_US
dc.titleThe Effect of the Thickness of the Low Temperature AlN Nucleation Layer on the Material Properties of GaN Grown on a Double-Step AlN Buffer Layer by the MOCVD Methoden_US
dc.identifier.doi10.1007/s11664-015-4210-xen_US
dc.identifier.journalJOURNAL OF ELECTRONIC MATERIALSen_US
dc.citation.volume45en_US
dc.citation.issue2en_US
dc.citation.spage859en_US
dc.citation.epage866en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電機學院zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000371167600001en_US
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