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dc.contributor.authorChen, Po-Hsunen_US
dc.contributor.authorChang, Kuan-Changen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorTsai, Tsung-Mingen_US
dc.contributor.authorPan, Chih-Hungen_US
dc.contributor.authorSu, Yu-Tingen_US
dc.contributor.authorWu, Cheng-Hsienen_US
dc.contributor.authorSu, Wan-Chingen_US
dc.contributor.authorYang, Chih-Chengen_US
dc.contributor.authorChen, Min-Chenen_US
dc.contributor.authorTu, Chun-Haoen_US
dc.contributor.authorChen, Kai-Huangen_US
dc.contributor.authorLo, Ikaien_US
dc.contributor.authorZheng, Jin-Chengen_US
dc.contributor.authorSze, Simon M.en_US
dc.date.accessioned2017-04-21T06:55:57Z-
dc.date.available2017-04-21T06:55:57Z-
dc.date.issued2016-11en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2016.2609642en_US
dc.identifier.urihttp://hdl.handle.net/11536/132831-
dc.description.abstractIn this paper, indium-tin-oxide (ITO) was used to act as both insulator and top electrode in resistive random access memory (RRAM) on identical bottom substrates. This is achieved by cosputtering an ITO target with nitride (N-2) or oxygen (O-2) gas as the insulator; then capping by an ITO electrode, such that both the rectifier and RRAM characteristics can be achieved before and after a forming process, respectively. In contrast, using pure ITO as an insulator does not exhibit RRAM behavior. To verify the rectifier and RRAM characteristics, material analyses and electrical measurements at various temperatures were conducted. Reliability tests including retention and endurance were also applied to verify the resistance switching stability. Finally, the rectifier and RRAM conduction models were proposed to examine the resistance switching behaviors. By applying the ITO material as both electrode and insulator, the resistance switching characteristic with high reliability is thus obtained.en_US
dc.language.isoen_USen_US
dc.subjectIndium-tin-oxide (ITO)en_US
dc.subjectnitride gas (N-2)en_US
dc.subjectoxygen gas (O-2)en_US
dc.subjectresistive random access memory (RRAM)en_US
dc.titleModifying Indium-Tin-Oxide by Gas Cosputtering for Use as an Insulator in Resistive Random Access Memoryen_US
dc.identifier.doi10.1109/TED.2016.2609642en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume63en_US
dc.citation.issue11en_US
dc.citation.spage4288en_US
dc.citation.epage4294en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000389340400021en_US
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