標題: Trenched 4H-SiC with tapered sidewall formed by Cl-2/O-2 reactive ion etching
作者: Tseng, Yuan-Hung
Tsui, Bing-Yue
電機學院
電子工程學系及電子研究所
College of Electrical and Computer Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 十一月-2016
摘要: In this article, trenches with various sidewall slant angles were generated on 4H silicon carbide substrate using Cl-2/O-2-based reactive ion etching. A series of experiments was conducted to investigate the effects of chamber environmental conditions, including Cl-2/O-2 mixing ratios, radio frequency power, and process pressure. The results indicate that the chamber pressure, ion energy, redeposition of etch products/byproducts, and even the existence of photoresist are critical factors affecting the slant angle. The introduction of oxygen not only changes the etch profile but may also cause a serious problem known as the micromasking effect. A method combining photoresist and hydrofluoric acid clean was proposed to eliminate the micromasking effect while keeping the sidewall passivation. (C) 2016 American Vacuum Society.
URI: http://dx.doi.org/10.1116/1.4965421
http://hdl.handle.net/11536/132837
ISSN: 0734-2101
DOI: 10.1116/1.4965421
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
Volume: 34
Issue: 6
顯示於類別:期刊論文